rn1967fs~rn1969fs 2004-04-12 1 toshiba transistor silicon npn epitaxial type (pct process) (bias resistor built-in transistor) rn1967fs,rn1968fs,rn1969fs switching, inverter circuit, interface circuit and driver circuit applications ? two devices are incorporated into a fine pitch small mold (6 pin) package. ? incorporating a bias resistor into a transistor reduces parts count. reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. ? complementary to rn2967fs~rn2969fs equivalent circuit and bias resistor values maximum ratings (ta = 25c) (q1, q2 common) characteristics symbol rating unit collector-base voltage v cbo 20 v collector-emitter voltage rn1967fs~ 1969fs v ceo 20 v rn1967fs 6 rn1968fs 7 emitter-base voltage rn1969fs v ebo 15 v collector current i c 50 ma collector power dissipation p c (note) 50 mw junction temperature t j 150 c storage temperature range rn1967fs~ rn1969fs t stg ? 55~150 c note: total rating unit: mm fs6 1.emiitter1 2.emitter2 3.base2 4.collector2 5.base1 6.collector1 0.150.0 5 0.10.05 6 0.80.05 1.00.05 0.70.0 5 1 2 0.10.05 0.3 5 0.3 5 3 1.00.05 0.10.05 5 4 0.4 8 +0.02 -0.0 4 (e1) (e2) (b2) (c2) (b1) (c1) jedec D jeita D toshiba 2-1f1c weight:0.001g (typ.) equivalent circuit (top view) 6 5 4 1 2 3 q2 q1 r1 r2 b c e type no. r1 (k ? ) r2 (k ? ) rn1967fs 10 47 rn1968fs 22 47 rn1969fs 47 22
rn1967fs~rn1969fs 2004-04-12 2 electrical characteristics (ta = 25c) (q1, q2 common) characteristics symbol test condition min typ. max unit i cbo v cb = 20 v, i e = 0 ? ? 100 collector cut-off current rn1967fs~1969fs i ceo v ce = 20 v, i b = 0 ? ? 500 na rn1967fs v eb = 6v, i c = 0 0.088 ? 0.131 rn1968fs v eb = 7v, i c = 0 0.085 ? 0.126 emitter cut-off current rn1969fs i ebo v eb = 15v, i c = 0 0.182 ? 0.271 ma rn1967fs 120 ? ? rn1968fs 120 ? ? dc current gain rn1969fs h fe v ce = 5 v, i c = 10 ma 100 ? ? collector-emitter saturation voltage rn1967fs~1969fs v ce (sat) i c = 5 ma, i b = 0.25 ma ? ? 0.15 v rn1967fs 0.7 ? 1.5 rn1968fs 0.8 ? 2.2 input voltage (on) rn1969fs v i (on) v ce = 0.2 v, i c = 5 ma 1.6 ? 5.0 v rn1967fs 0.5 ? 1.0 rn1968fs 0.6 ? 1.1 input voltage (off) rn1969fs v i (off) v ce = 5 v, i c = 0.1 ma 1.3 ? 2.6 v collector output capacitance rn1967fs~1969fs c ob v cb = 10 v, i e = 0, f = 1 mhz ? 1.2 ? pf rn1967fs 8 10 12 rn1968fs 17.6 22 26.4 input resistor rn1969fs r1 ? 37.6 47 56.4 k ? rn1967fs 0.17 0.213 0.255 rn1968fs 0.374 0.468 0.562 resistor ratio rn1969fs r1/r2 ? 1.71 2.14 2.56
rn1967fs~rn1969fs 2004-04-12 3 (q1,q2 common) ic - vi(on) 0.1 1 10 100 0.1 1 10 100 25 -25 rn1967fs ic - vi(on) 0.1 1 10 100 0.1 1 10 100 25 -25 ic - vi(on) 0.1 1 10 100 0.1 1 10 100 25 -25 ic - vi(off) 10 100 1000 10000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 25 -25 rn1967fs ic - vi(off) 10 100 1000 10000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 25 -25 ic - vi(off) 10 100 1000 10000 0.6 1 1.4 1.8 2.2 2.6 3 25 -25 ta=100c ta=100c ta=100c ta=100c ta=100c ta=100c common emitter vce=0.2v input voltage vi(on) (v) co lle c t o r c urrent i c ( ma ) common emitter vce=5v input voltage vi(off) (v) collector current ic (a) common emitter vce=0.2v input voltage vi(on) (v) collector current ic (ma) common emitter vce=0.2v input voltage vi(on) (v) collector current ic (ma) input voltage vi(off) (v) collector current ic (a) common emitter vce=5v input voltage vi(off) (v) collector current ic (a) common emitter vce=5v rn1968fs rn1968fs rn1969fs rn1969fs
rn1967fs~rn1969fs 2004-04-12 4 (q1,q2 common) hfe - ic 10 100 1000 1 10 100 25 -25 hfe - ic 10 100 1000 1 10 100 25 -25 rn1968fs hfe - ic 10 100 1000 1 10 100 25 -25 rn1969fs vce(sat) - ic 10 100 1000 110100 25 -25 vce(sat) - ic 10 100 1000 110100 25 -25 rn1968fs vce(sat) - ic 10 100 1000 110100 25 -25 rn1969fs ta=100c ta=100c ta=100c ta=100c ta=100c ta=100c common emitter vce = 5v collector current ic (ma) dc current gain hfe common emitter ic / ib = 20 collector current ic (ma) collector-emitter saturation voltage vce(sat) (mv) collector current ic (ma) dc current gain hfe common emitter vce = 5v collector current ic (ma) dc current gain hfe common emitter ic / ib = 20 collector current ic (ma) collector-emitter saturation voltage vce ( sat ) ( mv ) common emitter ic / ib = 20 collector current ic (ma) collector-emitter saturation voltage vce(sat) (mv) common emitter vce = 5v rn1967fs rn1967fs
rn1967fs~rn1969fs 2004-04-12 5 type name marking rn1967fs rn1968fs rn1969fs handling precaution when handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. type name j6 1 2 3 4 5 6 type name j7 1 2 3 4 5 6 type name j8 1 2 3 4 5 6
rn1967fs~rn1969fs 2004-04-12 6 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba fo r any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inhe rent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utiliz ing toshiba products, to co mply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semic onductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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